DocumentCode
726617
Title
Development of 1700V hybrid module with Si-IGBT and SiC-SBD for high efficiency AC690V application
Author
Takaku, T. ; Wang, H. ; Matsuda, N. ; Igarashi, S. ; Nishimura, T. ; Miyashita, S. ; Ikawa, O.
Author_Institution
Fuji Electr. Co., Ltd., Fuji, Japan
fYear
2015
fDate
1-5 June 2015
Firstpage
844
Lastpage
849
Abstract
This paper describes about newly developed 1700V/400A hybrid module which consists of Si-IGBT and SiC-SBD. The static and dynamic characteristics were evaluated and the turn-on loss is 38% lower and the reverse recovery loss is 83% lower than the conventional all-Si IGBT module because of the reverse recovery current of SiC-SBD is very small to be an unipolar device. The radiation noise on hybrid module becomes higher with increasing collector current, but the peak value of the noise from hybrid module is almost same as the all-Si module if the collector current is less than 300A. In AC690V PWM inverter, the total power dissipation of hybrid module is 8% lower at 1 kHz and 29% lower at 10 kHz compare to the all Si module. Therefore the 1700V hybrid module is useful as a power module for an AC690V high efficiency inverter system such as wind power generation system and high voltage solar power generation system. This paper reports about the static and dynamic characteristics and the radiation noise measurement results on the 400A/1700V hybrid module.
Keywords
PWM invertors; Schottky diodes; insulated gate bipolar transistors; silicon compounds; AC690V PWM inverter; Schottky-barrier diodes; collector current; current 400 A; high voltage solar power generation system; power dissipation; radiation noise measurement; reverse recovery current; reverse recovery loss; silicon carbide-SBD; silicon-IGBT; turn-on loss; voltage 1700 V; wind power generation system; Hybrid power systems; Insulated gate bipolar transistors; Inverters; Noise; Noise measurement; Silicon; Switches; Hybrid; IGBT; SiC;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on
Conference_Location
Seoul
Type
conf
DOI
10.1109/ICPE.2015.7167880
Filename
7167880
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