Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs

The HC degradation of nanoscale FD-SOI n-MOSFETs has been investigated under the worst bias stress conditions (V_ds,stress = V_gs,stress). At high stress voltages the hot carriers injected into the gate dielectric are the main degradation mechanism, superseding the interface degradation. The proposed degradation mechanisms are supported with the interface and gate dielectric trap properties extracted from LFN measurements.