Experimental Demonstration of Ferroelectric Gate-Stack AlGaN/GaN-on-Si MOS-HEMTs With Voltage Amplification for Power Applications

Author

Chen, P.-G. ; Wei, Y.-T. ; Tang, M. ; Lee, Moon Ho

Author_Institution

Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

Volume

61

Issue

8

fYear

2014

fDate

Aug. 2014

Firstpage

3014

Lastpage

3017

Abstract

AlGaN/GaN-on-Si metal-oxide-semiconductor high-electron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (g_m) (18.4% enhancement) using the negative capacitance (NC) effect. An I_Dlin with~23% enhancement and a high overdrive voltage implies a higher dΨ/dV_g at 2-D electron gas, due to NC with small V_DS. The channel conductance (g_d) at almost zero V_DS exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

Keywords

III-V semiconductors; aluminium compounds; ferroelectric devices; gallium compounds; power HEMT; power MOSFET; silicon; wide band gap semiconductors; 2D electron gas; AlGaN-GaN-Si; ferroelectric gate-stack MOS-HEMT; high electron mobility transistor; integrated ferroelectric polarization gate stacks; metal oxide semiconductor transistor; negative capacitance; overdrive voltage; power application; voltage amplification; Aluminum gallium nitride; Capacitance; Gallium nitride; HEMTs; Iron; Logic gates; AlGaN/GaN; ferroelectric (FE); subthreshold swing (SS); subthreshold swing (SS).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2330504

Filename

6845344