DocumentCode
73011
Title
Application-Specific Wear Leveling for Extending Lifetime of Phase Change Memory in Embedded Systems
Author
Duo Liu ; Tianzheng Wang ; Yi Wang ; Zili Shao ; Qingfeng Zhuge ; Sha, Edwin H-M
Author_Institution
Coll. of Comput. Sci., Chongqing Univ., Chongqing, China
Volume
33
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
1450
Lastpage
1462
Abstract
Phase change memory (PCM) has been proposed to replace NOR flash and DRAM in embedded systems because of its attractive features. However, the endurance of PCM greatly limits its adoption in embedded systems. As most embedded systems are application-oriented, we can tackle the endurance problem of PCM by exploring application-specific features such as fixed access patterns and update frequencies. In this paper, we propose an application-specific wear leveling technique, called Curling-PCM, to evenly distribute write activities across the whole PCM chip to improve the endurance of PCM in embedded systems. The basic idea is to exploit application-specific features in embedded systems and periodically move the hot region across the whole PCM chip. To reduce the overhead of moving the hot region and improve the performance of PCM-based embedded systems, a fine-grained partial wear leveling policy is proposed for Curling-PCM, by which only part of the hot region is moved during each request handling period. Experimental results show that Curling-PCM can effectively evenly distribute write traffic for a prime application of PCM in embedded systems. We expect this paper can serve as a first step toward the full exploration of application-specific features in PCM-based embedded systems.
Keywords
application specific integrated circuits; embedded systems; phase change memories; Curling-PCM; DRAM; NOR flash; application-specific wear leveling technique; embedded system; fine-grained partial wear leveling policy; fixed access pattern; overhead reduction; phase change memory lifetime extension; request handling period; write traffic distribution; Ash; Computer architecture; Embedded systems; Equations; Microprocessors; Phase change materials; Random access memory; Application specific; endurance; phase change memory; wear leveling; write activity reduction;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2014.2341922
Filename
6899774
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