DocumentCode
732012
Title
Reducing anchor loss in piezoelectric-on-silicon laterally vibrating resonators by combination of etched-slots and convex edges
Author
Xiao Di ; Lee, Joshua E.-Y
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong, China
fYear
2015
fDate
21-25 June 2015
Firstpage
2033
Lastpage
2036
Abstract
In this paper, we report enhancements by over 9 times in the quality factor (Q) of thin film piezoelectric-on-substrate (TPoS) MEMS resonators through engineering their acoustic modes. Specifically, we considered the effectiveness of using slots and convex curving of the resonator edges on reducing anchor loss to improve Q. The higher factor of improvement reported here compared to previously reported lamb-wave resonators based only Aluminum Nitride (AlN) and metal is likely due to lower interfacial losses when silicon is added to the structure, which also reduces thickness vibrations that are typical of lamb modes of vibration.
Keywords
III-V semiconductors; Q-factor; crystal resonators; etching; microcavities; micromechanical resonators; silicon; thin films; vibrations; wide band gap semiconductors; AlN; Si; TPoS MEMS resonators; aluminum nitride; anchor loss; convex curving; convex edges; etched-slots; interfacial losses; lamb-wave resonators; piezoelectric-on-silicon laterally vibrating resonators; quality factor; thickness vibrations; thin film piezoelectric-on-substrate; Acoustics; Aluminum nitride; Electrodes; III-V semiconductor materials; Micromechanical devices; Resonant frequency; Silicon; MEMS resonator; TPoS; aluminum nitride; quality factor; support loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on
Conference_Location
Anchorage, AK
Type
conf
DOI
10.1109/TRANSDUCERS.2015.7181355
Filename
7181355
Link To Document