• DocumentCode
    732428
  • Title

    Mobility enhancement of graphene nanoribbon by ALD HfO2 and its optoelectronic properties

  • Author

    Xuechao Yu ; Qi Jie Wang

  • Author_Institution
    Photonics Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrated that depositing HfO2 film on graphene nanoribbons greatly enhance the mobility through weakening the Coulombic interactions. As a result, the graphene nanoribbon photodetectors with HfO2 layer exhibits high responsivity of ~2A/W at room temperature.
  • Keywords
    atomic layer deposition; carrier mobility; field effect transistors; graphene; graphene devices; hafnium compounds; high-k dielectric thin films; mercury compounds; nanoelectronics; nanoribbons; nanosensors; photodetectors; thin film sensors; ALD; Coulombic interactions; HfO2-C; field-effect transistor; graphene nanoribbon photodetectors; mobility enhancement; optoelectronic properties; temperature 293 K to 298 K; thin film; Field effect transistors; Graphene; Hafnium compounds; Lighting; Measurement by laser beam; Photoconductivity; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7182857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=732428