Single and Multiple Cell Upsets in 25-nm NAND Flash Memories

Author

Bagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro ; Ferlet-Cavrois, Veronique

Author_Institution

Dipt. di Ing. dell´Inf., Univ. di Padova, Padova, Italy

Volume

60

Issue

4

fYear

2013

fDate

Aug. 2013

Firstpage

2675

Lastpage

2681

Abstract

We analyzed floating-gate upsets in 25-nm multilevel cell NAND Flash memories irradiated with heavy ions, including alpha particles. Compared to multilevel cell memories of previous generations, these devices show no apparent error dependence on the program level, adherence to the cosine law, and a large number of multiple cell upsets (MCUs). Floating-gate errors were mapped to their physical location, and MCUs were studied as a function of their multiplicity, direction, particle linear energy transfer, irradiation angle, and program level.

Keywords

NAND circuits; flash memories; floating point arithmetic; MCU; NAND flash memories; alpha particles; cosine law; floating-gate errors; heavy ions; irradiation angle; multiple cell upsets; particle linear energy transfer; program level; size 25 nm; Alpha particles; Arrays; Flash memories; Ions; Radiation effects; Sensitivity; Threshold voltage; Flash memories; heavy ions; multiple-cell upset; radiation effects; single-event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2273436

Filename

6575174