• DocumentCode
    739522
  • Title

    A Scalable Dependability Scheme for Routing Fabric of SRAM-Based Reconfigurable Devices

  • Author

    Yazdanshenas, Sadegh ; Asadi, Hossein ; Khaleghi, Behnam

  • Author_Institution
    Dept. of Comput. Eng., Sharif Univ. of Technol., Tehran, Iran
  • Volume
    23
  • Issue
    9
  • fYear
    2015
  • Firstpage
    1868
  • Lastpage
    1878
  • Abstract
    With the continual scaling of feature size, system failure due to soft errors is getting more frequent in CMOS technology. Soft errors have particularly severe effects in static random-access memory (SRAM)-based reconfigurable devices (SRDs) since an error in SRD configuration bits can permanently change the functionality of the system. Since interconnect resources are the dominant contributor to the overall configuration memory upsets in SRD-based designs, the system failure rate can be significantly reduced by mitigating soft errors in routing fabric. This paper first presents a comprehensive analysis of SRD switch box susceptibility to short and open faults. Based on this analysis, we present a dependable routing fabric by efficiently employing asymmetric SRAM cells in configuration memory of SRDs. The proposed scheme is highly scalable and capable of achieving any desired level of dependability. In the proposed scheme, we also present a fault masking mechanism to mitigate the effect of soft errors in the routing circuitry. A routing algorithm is also proposed to take the advantage of the proposed routing fabric. Experimental results over the Microelectronics Center of North Carolina benchmarks show that the proposed scheme can mitigate both single and multiple event upsets in the routing fabric and can reduce system failure rate orders of magnitude as compared with the conventional protection techniques.
  • Keywords
    CMOS integrated circuits; SRAM chips; integrated circuit interconnections; radiation hardening (electronics); CMOS technology; Microelectronics Center of North Carolina benchmarks; SRAM-based reconfigurable devices; SRD switch box susceptibility; asymmetric SRAM cells; configuration memory; fault masking mechanism; interconnect resources; open faults; routing circuitry; routing fabric; scalable dependability scheme; short faults; soft errors; static random-access memory; Circuit faults; Fabrics; Redundancy; Routing; SRAM cells; Switches; Tunneling magnetoresistance; Asymmetric static random-access memory (SRAM); SRAM-based reconfigurable devices (SRDs); dependability; routing fabric; soft errors;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2014.2344051
  • Filename
    6879339