Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

Author

Poiroux, T. ; Rozeau, O. ; Scheer, P. ; Martinie, S. ; Jaud, M.A. ; Minondo, M. ; Juge, A. ; Barbe, J.C. ; Vinet, M.

Author_Institution

Leti, Commissariat a l´Energie Atomique et aux Energies Alternatives, Grenoble, France

Volume

62

Issue

9

fYear

2015

Firstpage

2751

Lastpage

2759

Abstract

A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In this part, a full analytical calculation of interface potentials, valid for all regimes of independent double-gate device operation, is detailed. This analytical computation, which is the heart of Leti-UTSOI2, provides explicit expressions for all quantities required to build dc and ac core models.

Keywords

semiconductor device models; silicon-on-insulator; Leti-UTSOI compact model; UTBB-FDSOI technologies; buried oxide fully depleted silicon-on-insulator transistors; interface potentials analytical model; low-doped ultrathin body; Analytical models; Capacitance; Electric potential; Logic gates; Mathematical model; Poisson equations; Transistors; Analytical models; SPICE; compact modeling; fully depleted silicon-on-insulator (FDSOI); independent double-gate; semiconductor device modeling; ultrathin body BOX (UTBB); ultrathin body BOX (UTBB).; ultrathin body and buried oxide (BOX);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2458339

Filename

7185387