DocumentCode
746318
Title
High-performance Al-free In0.75Ga0.25P/InP/In xGa1-xAs/InP (x⩾53%) backside-doped split-channel HFETs with 0.25 μm T-gates
Author
Mesquida Küsters, A. ; Puls, C. ; Wüller, R. ; Behres, A. ; Kohl, A. ; Sommer, V. ; Heime, K.
Author_Institution
Inst. fur Halbleitertechnik, Tech. Hochschule Aachen, Germany
Volume
31
Issue
5
fYear
1995
fDate
3/2/1995 12:00:00 AM
Firstpage
409
Lastpage
411
Abstract
High-performance pseudomorphic InP/InxGa1-xAs/InP backside-doped split-channel heterostructure field-effect transistors (BDSCh-HFETs) with a strained undoped In0.75Ga0.25P Schottky barrier enhancement layer are reported. Devices with mushroom-shaped gates (LG=0.25 μm) demonstrated at 300 K maximum extrinsic transconductances of gm=510 mS/mm and current cutoff frequencies of fT=102 GHz coupled with off-state drain-source breakdown voltages of VDSbr=10 V. At 18 GHz a unilateral power gain of 25.6 dB was measured, corresponding to fmax>200 GHz
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; 0.25 mum; 10 V; 102 GHz; 18 GHz; 25.6 dB; 510 mS; HEMT; In0.75Ga0.25P-InP-InGaAs-InP; InP; Schottky barrier enhancement layer; T-gates; backside-doped split-channel HFETs; current cutoff frequencies; drain current; extrinsic transconductances; mushroom-shaped gates; off-state drain-source breakdown voltage; pseudomorphic transistor; unilateral power gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950286
Filename
370010
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