Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors

Author

Tutt, Marcel N. ; Pavlidis, Dimitris ; Khatibzadeh, Ali ; Bayraktaroglu, Burhan

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

42

Issue

2

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

219

Lastpage

230

Abstract

The low frequency noise characteristics of modern self-aligned AlGaAs/GaAs power HBT´s have been studied as a function of bias, temperature, frequency, and circuit topology. The devices have a 1/f^γ behavior between 10 Hz and 100 Hz with 0.78⩽γ⩽1.65. Strong deviation from 1/f^γ is measured at higher frequencies due to trapping. The bias dependence of the collector noise ranged from I_C^1.5-I_C^2.6, while that for the base noise ranges from I_B^0.7-I_B^2.5. In all cases the collector noise is greater than the base noise. The base noise is apparently dominated by surface recombination noise and generation-recombination (G-R) noise. The collector noise is due to recombination mechanisms and G-R noise. The activation energy (E_a) of the most significant trap is approximately 0.58 eV. The noise of the devices tested was found to be dominated by material and fabrication related mechanisms and not by fundamental mechanisms

Keywords

1/f noise; III-V semiconductors; aluminium compounds; electron traps; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; hole traps; power bipolar transistors; semiconductor device models; semiconductor device noise; surface recombination; 1/f^γ behavior; 10 to 100 Hz; AlGaAs-GaAs; G-R noise; LF noise characteristics; activation energy; base noise; bias dependence; circuit topology; collector noise; frequency dependence; generation-recombination noise; heterojunction bipolar transistors; low frequency noise; self-aligned power HBT; surface recombination noise; temperature dependence; trapping; Circuit noise; Circuit topology; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise level; Noise shaping; Phase noise;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.370076

Filename

370076