• DocumentCode
    747000
  • Title

    Introduction to the Special Issue on GaN and Related Nitride Compound Device Reliability

  • Author

    Christou, Aris ; Fantini, Fausto

  • Volume
    8
  • Issue
    2
  • fYear
    2008
  • fDate
    6/1/2008 12:00:00 AM
  • Firstpage
    239
  • Lastpage
    239
  • Abstract
    The 23 papers in this special issue focus on gallium nitride and related nitride compounds device reliability. The main emphasis in this issue is on the reliability of HFETs and LEDs.
  • Keywords
    Aluminum gallium nitride; Electric breakdown; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Microwave devices; Photonic band gap; Special issues and sections; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2008.925989
  • Filename
    4539820
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=747000