Faraday/Ion Mass Spectroscopy Dosimeter for Plasma Immersion Ion Implantation/Plasma Doping Processes of Semiconductor Manufacturing

Author

Qin, Shu ; McTeer, Allen

Author_Institution

Micron Technol., Inc., Boise, ID

Volume

36

Issue

3

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

828

Lastpage

833

Abstract

A new method and apparatus called Faraday/ion mass spectroscopy (IMS) dosimeter system is developed and can be used to determine the implanted impurity dose and profile for any molecular or multispecies-based plasma immersion ion implantation (PIII)/plasma doping (PLAD) processes. Good agreement between the boron doses measured by this method and those measured by SIMS has been demonstrated. Because of its direct, real-time, in situ, and close-loop control manner, this method shows a good controllability and repeatability for the PIII/PLAD processes.

Keywords

boron; doping profiles; elemental semiconductors; impurities; mass spectra; plasma immersion ion implantation; semiconductor doping; silicon; Faraday/ion mass spectroscopy dosimeter; Si:B; boron doses; close-loop control; impurity dose; impurity profile; multispecies-based plasma immersion ion implantation; plasma doping; semiconductor manufacturing; Boron; Doping profiles; Manufacturing processes; Mass spectroscopy; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Semiconductor device doping; Semiconductor device manufacture; Semiconductor impurities; Dosimetry measurement; Faraday cup/ion mass spectroscopy (IMS); plasma doping (PLAD); plasma immersion ion implantation (PIII);

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2008.923741

Filename

4539882