DocumentCode
747580
Title
Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge
Author
Zainuddin, A.N.M. ; Haque, A.
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Volume
52
Issue
12
fYear
2005
Firstpage
2812
Lastpage
2814
Abstract
We show that a higher value of the dielectric constant in SiGe relative to that in Si causes a reduction in the magnitude of the threshold voltage in strained-Si/SiGe n- and p-MOSFETs. This reduction increases with decreasing thickness of the strained-Si layer. Our results are consistent with the observed mismatch between calculated and measured threshold voltage shifts in strained-Si MOSFETs.
Keywords
Ge-Si alloys; MIS devices; MOSFET; permittivity; silicon; MOS devices; Si-SiGe; dielectric constants; quantum-mechanical analysis; threshold voltage reduction; threshold voltage shift; Charge carrier density; Dielectric constant; Dielectric devices; Dielectric measurements; Germanium silicon alloys; MOS devices; MOSFET circuits; Potential well; Silicon germanium; Threshold voltage; Dielectric constant; quantum–mechanical analysis; strained-Si MOSFETs; threshold voltage shift;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2005.859658
Filename
1546350
Link To Document