• DocumentCode
    747923
  • Title

    Steps toward a capacitance standard based on single-electron counting at PTB

  • Author

    Scherer, Hansjörg ; Lotkhov, Sergey V. ; Willenberg, Gerd-Dietmar ; Zorin, Alexander B.

  • Author_Institution
    Phys.-Technische Bundesanstalt, Braunschweig, Germany
  • Volume
    54
  • Issue
    2
  • fYear
    2005
  • fDate
    4/1/2005 12:00:00 AM
  • Firstpage
    666
  • Lastpage
    669
  • Abstract
    A capacitance standard based on the definition of capacitance C=Ne/U is realized if a capacitor is charged with a known number N of electrons (e is the elementary charge), and the voltage U across the capacitor is measured . If U is measured by means of a Josephson voltage standard, C is solely determined by quantum numbers and fundamental constants. Presently, Physikalisch-Technische Bundesanstalt (PTB) is setting up this experiment using a special type of single-electron pump, the so-called r-pump , for transferring electrons one by one onto a cryogenic vacuum capacitor with the decadic capacitance C =1 pF. We report on the progress in the setup with emphasis on the characterization of the single-electron tunneling elements. We describe the modifications of the single-electron circuit that are necessary to implement the capacitor charging experiment by using a four- or five-junction r-pump.
  • Keywords
    capacitance measurement; cryogenic electronics; measurement standards; single electron transistors; tunnelling; 1 pF; Josephson voltage standard; PTB; Physikalisch-Technische Bundesanstalt; capacitance standard; capacitor charging; charge transfer; cryogenic electronics; cryogenic vacuum capacitor; decadic capacitance; fundamental constants; quantum numbers; single-electron circuit; single-electron counting; single-electron pump; single-electron tunneling; thin-film devices; tunnel transistors; Capacitance measurement; Capacitors; Charge measurement; Cryogenics; Current measurement; Electrons; Measurement standards; Quantum capacitance; Tunneling; Voltage; Capacitance; charge transfer; cryogenic electronics; current; quantization; thin-film devices; tunnel transistors; tunneling;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.2004.843075
  • Filename
    1408259