DocumentCode
748108
Title
1.55- 
m VCSEL With Enhanced Modulation Bandwidth and Temperature Range
Author
Hofmann, W. ; Müller, M. ; Böhm, G. ; Ortsiefer, M. ; Amann, M.-C.
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Volume
21
Issue
13
fYear
2009
fDate
7/1/2009 12:00:00 AM
Firstpage
923
Lastpage
925
Abstract
InP-based vertical-cavity surface-emitting lasers (VCSELs) at 1.55-mum emission wavelength with improved modulation bandwidth and temperature behavior are demonstrated. Utilizing an improved active region, thermal design, and reduced chip parasitics, a superior modulation-bandwidth >10 GHz is achieved up to 85degC. The new VCSEL device is compared in detail with our reference design, analyzing all bandwidth-limiting elements. With their improved temperature range at invariant output power and minimal threshold change with temperature these VCSELs are especially qualified for uncooled operation in passive optical networks. Potential bit rates of 12.5 or even 17 Gb/s are expected with this kind of devices for cost-effective 100-G Ethernet solutions at metro-range.
Keywords
III-V semiconductors; indium compounds; laser beams; laser cavity resonators; optical fibre LAN; optical modulation; surface emitting lasers; Ethernet; InP; VCSEL device; bit rate 12.5 Gbit/s; bit rate 17 Gbit/s; enhanced modulation bandwidth; passive optical network; vertical-cavity surface-emitting laser; wavelength 1.55 mum; InP; optical communications; semiconductor lasers; vertical-cavity surface-emitting laser (VCSEL);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2020605
Filename
4838806
Link To Document