Radiation effects on UHF power MOSFETs

Author

Okabe, Takeaki ; Kato, Masataka ; Katsueda, Mineo ; Takei, Ichiro ; Ikeda, Masahiko

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2110

Lastpage

2116

Abstract

The effects of ionizing radiation of UHF power MOSFETs are studied. It is found that a power MOSFET amplifier exhibits little change in output power and efficiency in the linear region, but it is seriously degraded in the saturation region. The reason for this degradation is an increase in on-resistance and a decrease in the maximum current, both caused by radiation-induced interface states. A MOSFET exposed to radiation while it is operating as an amplifier at 860 MHz has a different threshold voltage shift than one not operating at high-frequency. This phenomenon can be explained by the annealing effect of the high-frequency electric field across the gate. For improvement in radiation tolerance, a device with a thinner thermal oxide film on the offset region is proposed and discussed

Keywords

X-ray effects; annealing; insulated gate field effect transistors; interface electron states; power amplifiers; power transistors; semiconductor device testing; 860 MHz; UHF power MOSFET; annealing effect; high-frequency electric field; ionising radiation effect; power MOSFET amplifier; radiation tolerance; radiation-induced interface states; threshold voltage shift; Annealing; Degradation; High power amplifiers; Interface states; Ionizing radiation; MOSFETs; Power amplifiers; Power generation; Radiation effects; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45412

Filename

45412