Radiation effects on ion-implanted silicon-dioxide films

Author

Kato, Masataka ; Watanabe, Kikuo ; Okabe, Takeaki

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2199

Lastpage

2204

Abstract

The effects of radiation on SiO₂ films implanted with high ion doses are studied. The interface-state buildup is suppressed by the ion-implanted oxide. The amount of suppression depends on the ion dose, the gate bias during irradiation, and the annealing atmosphere. A radiation-hardening technique for field oxide is proposed, using the ion-implanted oxide. Radiation-induced interface-state density is suppressed by one order of magnitude using arsenic implantation. By applying this technique to a conventional bipolar process, current gain reduction is suppressed to within 10% after 10⁶ rad(SiO₂) irradiation

Keywords

arsenic; insulated gate field effect transistors; ion implantation; metal-insulator-semiconductor devices; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; silicon compounds; Si-SiO₂:As; SiO₂ films; annealing atmosphere; bipolar process; current gain reduction; effects of radiation; field oxide; gate bias; high ion doses; interface-state buildup; ion-implanted oxide; radiation-hardening technique; Aluminum; Bipolar transistors; Degradation; Electron traps; Fabrication; MOS capacitors; Radiation effects; Semiconductor films; Simulated annealing; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45425

Filename

45425