• DocumentCode
    750007
  • Title

    The effect of silicon avalanche diodes on fuse behavior in LV power networks

  • Author

    Beutel, Andreas ; Van Coller, John

  • Author_Institution
    Sch. of Electr. & Inf. Eng., Univ. of the Witwatersrand, Johannesburg, South Africa
  • Volume
    38
  • Issue
    3
  • fYear
    2002
  • Firstpage
    825
  • Lastpage
    831
  • Abstract
    The effect of silicon avalanche diodes (SADs) on the behavior of fuses in low-voltage (LV) power networks is shown, as well as the effect of the fuses on the energy dissipation in the SADs. In order to achieve this, an existing model developed for medium-voltage fuses was adapted for LV fuses operating in the presence of SADs. An SAD model was also developed. Both models were validated by laboratory measurement. The effects of fault closing angle and fault level on SAD energy dissipation are shown, and a general method for determining the SAD energy rating for any given situation is derived
  • Keywords
    avalanche diodes; electric fuses; elemental semiconductors; silicon; LV power networks; Si; energy dissipation; energy rating; fault closing angle; fault level; fuse behavior; medium voltage fuses; silicon avalanche diodes; Diodes; Energy dissipation; Fault currents; Fuses; Intelligent networks; Laboratories; Power system protection; Silicon; Surges; Voltage;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/TIA.2002.1003436
  • Filename
    1003436