DocumentCode
750007
Title
The effect of silicon avalanche diodes on fuse behavior in LV power networks
Author
Beutel, Andreas ; Van Coller, John
Author_Institution
Sch. of Electr. & Inf. Eng., Univ. of the Witwatersrand, Johannesburg, South Africa
Volume
38
Issue
3
fYear
2002
Firstpage
825
Lastpage
831
Abstract
The effect of silicon avalanche diodes (SADs) on the behavior of fuses in low-voltage (LV) power networks is shown, as well as the effect of the fuses on the energy dissipation in the SADs. In order to achieve this, an existing model developed for medium-voltage fuses was adapted for LV fuses operating in the presence of SADs. An SAD model was also developed. Both models were validated by laboratory measurement. The effects of fault closing angle and fault level on SAD energy dissipation are shown, and a general method for determining the SAD energy rating for any given situation is derived
Keywords
avalanche diodes; electric fuses; elemental semiconductors; silicon; LV power networks; Si; energy dissipation; energy rating; fault closing angle; fault level; fuse behavior; medium voltage fuses; silicon avalanche diodes; Diodes; Energy dissipation; Fault currents; Fuses; Intelligent networks; Laboratories; Power system protection; Silicon; Surges; Voltage;
fLanguage
English
Journal_Title
Industry Applications, IEEE Transactions on
Publisher
ieee
ISSN
0093-9994
Type
jour
DOI
10.1109/TIA.2002.1003436
Filename
1003436
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