• DocumentCode
    750529
  • Title

    Improved double cascode self-bootstrapping technique for gain enhancement in GaAs MESFET opamps

  • Author

    Xiao, Shiwu ; Salama, C.A.T.

  • Author_Institution
    Toronto Univ., Ont., Canada
  • Volume
    28
  • Issue
    12
  • fYear
    1992
  • fDate
    6/4/1992 12:00:00 AM
  • Firstpage
    1128
  • Lastpage
    1129
  • Abstract
    An improved double cascode self-bootstrapping technique for gain enhancements in GaAs MESFET opamps is proposed. The experimental results show that this new configuration can provide a high output impedance and a significant reduction in area. A single stage opamp using this technique shows a midband gain of 48 dB and a unity-gain frequency of 500 MHz.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; linear integrated circuits; operational amplifiers; 48 dB; 500 MHz; GaAs; MESFET opamps; double cascode; gain enhancement; high output impedance; op amp; self-bootstrapping; single stage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920711
  • Filename
    141157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=750529