• DocumentCode
    750539
  • Title

    Facet heating in AlGaInP 670 nm double-heterojunction lasers

  • Author

    Tang, W.C. ; Rosen, H.J. ; Payne, R.N.

  • Author_Institution
    IBM Almaden Res. Center, San Jose, CA, USA
  • Volume
    28
  • Issue
    12
  • fYear
    1992
  • fDate
    6/4/1992 12:00:00 AM
  • Firstpage
    1129
  • Lastpage
    1131
  • Abstract
    Raman microprobe studies of AlGaInP 670 nm lasers show a higher facet temperature rise per unit output power than that observed in AlGaAs lasers. This heating appears to be localised in the lasing region of the laser facet. These results are supported by probe beam facet heating experiments which show substantial differences between the AlGaInP and AlGaAs lasers.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 670 nm; AlGaInP; Raman microprobe studies; double-heterojunction; laser facet; probe beam facet heating; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920712
  • Filename
    141158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=750539