• DocumentCode
    750611
  • Title

    22 GHz photodiode monolithically integrated with optical waveguide on semi-insulating InP using novel butt-joint structure

  • Author

    Kato, Kazuhiko ; Hata, Satoshi ; Kozen, A. ; Oku, S. ; Matsumoto, Shinichi ; Yoshida, J.

  • Author_Institution
    NTT Opto-electron. Labs., Kanagawa, Japan
  • Volume
    28
  • Issue
    12
  • fYear
    1992
  • fDate
    6/4/1992 12:00:00 AM
  • Firstpage
    1140
  • Lastpage
    1142
  • Abstract
    A novel butt-joint structure employing SiO2 sidewall film is used to realise the monolithic integration of an ultrahighspeed photodiode with an input waveguide. The SiO2 sidewall film serves to electrically isolate the photodiode and the waveguide as well as to protect the photodiode p-n junction from being damaged. The fabricated photodiode with an input waveguide operates at 22 GHz and has the same DC characteristics as those without integration.
  • Keywords
    integrated optics; integrated optoelectronics; optical waveguides; photodiodes; 22 GHz; InP; SiO 2 sidewall film; butt-joint structure; input waveguide; monolithic integration; optical waveguide; p-n junction; photodiode; semiinsulating semiconductor; ultrahighspeed;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920719
  • Filename
    141165
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=750611