High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

Author

Aoki, Masaki ; Suzuki, M. ; Takahashi, Masaharu ; Sano, Hiroyasu ; Ido, T. ; Kawano, T. ; Takai, Asuka

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

28

Issue

12

fYear

1992

fDate

6/4/1992 12:00:00 AM

Firstpage

1157

Lastpage

1158

Abstract

An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5.4 mA and a modulation efficiency as high as 13 dB/2 V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1.55 mu m.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical modulation; semiconductor junction lasers; semiconductor quantum wells; 1 V; 1.55 micron; 10 Gbit/s; 5.4 mA; InGaAs-InGaAsP; MQW electroabsorption-modulator integrated DFB laser; in-plane bandgap energy control technique; low-capacitance semi-insulating BH process; modulation efficiency; modulation voltage; semi-insulating buried heterostructure; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920730

Filename

141176