• DocumentCode
    751300
  • Title

    Optimization and realization of sub-100-nm channel length single halo p-MOSFETs

  • Author

    Borse, D.G. ; Rani KN, M. ; Jha, Neeraj K. ; Chandorkar, A.N. ; Vasi, J. ; Rao, V. Ramgopal ; Cheng, B. ; Woo, J.C.S.

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
  • Volume
    49
  • Issue
    6
  • fYear
    2002
  • fDate
    6/1/2002 12:00:00 AM
  • Firstpage
    1077
  • Lastpage
    1079
  • Abstract
    Single halo p-MOSFETs with channel lengths down to 100 nm are optimized, fabricated, and characterized as part of this study. We show extensive device characterization results to study the effect of large angle VT adjust implant parameters on device performance and hot carrier reliability. Results on both conventionally doped and single halo p-MOSFETs have been presented for comparison purposes
  • Keywords
    MOSFET; hot carriers; ion implantation; semiconductor device reliability; semiconductor doping; asymmetric channel; charge-pumping; halo doping; hot carrier reliability; implant parameters; large angle threshold voltage; optimization; output characteristics; single halo p-MOSFET; small channel lengths; tilt angle; Charge pumps; Doping profiles; Gate leakage; Hot carriers; Implants; Length measurement; Los Angeles Council; MOSFET circuits; Silicidation; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.1003752
  • Filename
    1003752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=751300