DocumentCode
751483
Title
High performance AlGaAs/GaAs quantum well MODFETs grown by chemical beam epitaxy
Author
Kempter, R. ; Rothfritz, H. ; Plauth, J. ; Muller, Rudolf ; Trankle, Gunther ; Weimann, G.
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Volume
28
Issue
12
fYear
1992
fDate
6/4/1992 12:00:00 AM
Firstpage
1160
Lastpage
1162
Abstract
High quality modulation doped AlGaAs/GaAs QW structures were grown by chemical beam epitaxy using TEGa, TiBAl and AsH3. MODFETs with gate lengths of 0.2 mu m fabricated from these heterostructures show extrinsic DC transconductances gm,max=330 mS/mm at drain currents ID=145 mA/mm. Maximum drain currents are IDmax=275 mA/mm. RF characterisation reveals extrinsic cutoff frequencies fT=72 GHz for the current gain, and fmax=144 GHz for the unilateral power gain, respectively.
Keywords
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; high electron mobility transistors; semiconductor quantum wells; 0.2 micron; AlGaAs-GaAs; III-V semiconductors; MODFETs; RF characterisation; chemical beam epitaxy; current gain; drain currents; extrinsic DC transconductances; extrinsic cutoff frequencies; gate lengths; quantum well; unilateral power gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920732
Filename
141178
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