• DocumentCode
    751489
  • Title

    Compact subthreshold slope modelling of short-channel double-gate MOSFETs

  • Author

    Monga, U. ; Fjeldly, T.A.

  • Author_Institution
    Dept. of Electron. & Telecommun., & UNIK - University Graduate Centre, Norwegian Univ. of Sci. & Technol., Kjeller
  • Volume
    45
  • Issue
    9
  • fYear
    2009
  • Firstpage
    476
  • Lastpage
    478
  • Abstract
    A precise, compact, subthreshold slope model of short-channel nanoscale double-gate MOSFETs is presented. The model encompasses the effects of device dimensions, built-in voltages and bias voltages on the subthreshold slope. The subthreshold model is based on conformal mapping techniques. Results are in excellent agreement with numerical simulations.
  • Keywords
    MOSFET; conformal mapping; nanotechnology; bias voltages; built-in voltages; compact subthreshold slope modelling; conformal mapping techniques; short-channel nanoscale double-gate MOSFETs; subthreshold slope;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.2810
  • Filename
    4840307
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=751489