• DocumentCode
    751556
  • Title

    A Quantum–Mechanical View on the Capacitance of a Silicon p-n Junction

  • Author

    Hurkx, G.A.M. ; Agarwal, P.

  • Author_Institution
    NXP Semicond., Leuven
  • Volume
    28
  • Issue
    4
  • fYear
    2007
  • fDate
    4/1/2007 12:00:00 AM
  • Firstpage
    312
  • Lastpage
    314
  • Abstract
    We have calculated the capacitance of a silicon p-n junction from a self-consistent solution to the effective-mass Schroumldinger and Poisson equations. Although the p-n product and the charge distribution deviate strongly from the semiclassical calculations, the quantum mechanically calculated capacitance of the silicon p-n junction differs only weakly from the semiclassical result. We show that the deviation from the semiclassical result can be approximated as band-gap narrowing in the quasi-neutral regions due to the exchange-energy term in the effective-mass Schroumldinger equation
  • Keywords
    Poisson equation; Schrodinger equation; capacitance; effective mass; elemental semiconductors; p-n junctions; quantum Hall effect; silicon; Poisson equations; Si; band-gap narrowing; charge distribution; effective-mass Schrodinger equation; exchange-energy term; p-n junction; quantum effect; quantum-mechanical capacitance; quasi-neutral regions; self-consistent solution; semiconductor devices; Charge carrier processes; P-n junctions; Photonic band gap; Poisson equations; Quantum capacitance; Quantum mechanics; Schrodinger equation; Semiconductor device doping; Silicon; Tunneling; Capacitance; diode; modeling; quantum effect semiconductor devices; tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.893225
  • Filename
    4137637