Effects of electrical stress parameters on polarization loss in ferroelectric P(L)ZT thin film capacitors

Author

Khamankar, Rajesh B. ; Kim, Jiyoung ; Sudhama, C. ; Jiang, Bo ; Lee, Jack C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

16

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

130

Lastpage

132

Abstract

The effects of stress parameters (e,g,, stress magnitude, frequency, and pulse shape) on the loss of DRAM polarization during unipolar pulse stressing in sol-gel P(L)ZT thin film capacitors have been studied. The results indicate that there is a strong correlation between the fatigue rate and the DRAM polarization for the fresh device. It has been found that contrary to what one might expect, the fatigue rate does not increase indefinitely with increasing stress voltage but saturates at the same voltage at which the polarization-voltage loop saturates. Though the effect of the rise time of the stress pulses on the fatigue rate is negligible, the fatigue rate is strongly dependent on the pulse width of the trapezoidal stress pulses.<>

Keywords

DRAM chips; ULSI; dielectric losses; dielectric polarisation; ferroelectric capacitors; ferroelectric devices; ferroelectric thin films; lanthanum compounds; lead compounds; piezoceramics; thin film capacitors; DRAM polarization; PLZT; PbLaZrO3TiO3; ULSI; electrical stress parameters; fatigue rate; ferroelectric PLZT thin film capacitors; polarization loss; polarization-voltage loop; pulse shape; pulse width; sol-gel thin film capacitors; stress frequency; stress magnitude; trapezoidal stress pulses; unipolar pulse stressing; Fatigue; Frequency; Polarization; Pulse shaping methods; Random access memory; Shape; Space vector pulse width modulation; Stress; Transistors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.372491

Filename

372491