A low on-resistance, high-current GaAs power VFET

Author

Plumton, D.L. ; Yuan, H.T. ; Kim, T.S. ; Taddiken, A.H. ; Ley, V. ; Kollman, R.L. ; Lagnado, I. ; Johnson, L.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

16

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

142

Lastpage

144

Abstract

We have developed a new fabrication process for GaAs VFETs that results in excellent performance in a 10 A prototype designed for switching in low voltage synchronous rectifier applications. The new fabrication process uses a buried carbon-doped GaAs gate structure for the gate electrodes and an epitaxial overgrowth step. We have demonstrated 10 A devices with 3.5 cm of gate width and 1.5 mohm of on-resistance (specific on-resistance of 84 μohm-cm²). The device required a 0.5 μm channel etched between 0.5 μm gates placing stringent requirements on the gate side wall etch profile and epitaxial doping uniformity.

Keywords

III-V semiconductors; field effect transistor switches; gallium arsenide; power field effect transistors; power semiconductor switches; semiconductor doping; vapour phase epitaxial growth; 0.5 micron; 1.5 mohm; 10 A; GaAs:C; LV synchronous rectifier applications; buried C-doped GaAs gate structure; epitaxial doping uniformity; epitaxial overgrowth step; fabrication process; gate side wall etch profile; high-current power VFET; low on-resistance; vertical FET; Contact resistance; Doping profiles; Electrodes; Etching; Fabrication; Gallium arsenide; Low voltage; Power supplies; Rectifiers; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.372495

Filename

372495