Equivalent Circuit Modeling of Separate Absorption Grading Charge Multiplication Avalanche Photodiode

Author

Mai, Yu Xiang ; Wang, Gang

Author_Institution

Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou

Volume

27

Issue

9

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

1197

Lastpage

1202

Abstract

In this paper, a novel equivalent circuit model for the frequency performance of separate absorption grading charge multiplication (SAGCM) avalanche photodiode (APD) is developed. This model includes effects of carrier transit time, avalanche buildup time, and parasitic RC elements. Based on the equivalent circuit model, frequency and bandwidth characteristics of SAGCM APD can be simulated in advance to device fabrication, and the simulation results are in good agreement with experimental data. Conventional pin photodiodes can also be simulated as a special case when M=1. In addition, the frequency response of SAGCM APDs and pin photodiodes with different illumination directions are investigated.

Keywords

avalanche photodiodes; equivalent circuits; p-i-n photodiodes; avalanche buildup time; avalanche photodiode; carrier transit time; equivalent circuit model; illumination directions; parasitic RC elements; pin photodiodes; separate absorption grading charge multiplication; Absorption; Avalanche photodiodes; Circuit simulation; Equivalent circuits; Frequency response; Impact ionization; Indium compounds; Optical receivers; Optical waveguides; PIN photodiodes; Avalanche photodiodes (APDs); equivalent circuit model; frequency response;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2008.929121

Filename

4840610