Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs

Author

Jin Chen ; Puzyrev, Yevgeniy S. ; Cher Xuan Zhang ; En Xia Zhang ; McCurdy, Michael W. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Pantelides, Sokrates T. ; Kaun, Stephen W. ; Kyle, Erin C. H. ; Speck, James S.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4080

Lastpage

4086

Abstract

The responses to 1.8 MeV proton irradiation of AlGaN/GaN HEMTs grown under Ga-rich and ammonia-rich conditions are investigated in this work. Changes in defect energy distributions of AlGaN/GaN HEMTs during proton irradiation are characterized via temperature-dependent low-frequency noise measurements. Density functional theory calculations show these changes are consistent with the reconfiguration and/or dehydrogenation of oxygen-related defects in Ga-rich devices.

Keywords

aluminium compounds; density functional theory; gallium compounds; high electron mobility transistors; hydrogenation; proton effects; radiation hardening (electronics); AlGaN-GaN; Ga-rich condition; HEMT; ammonia-rich condition; defect energy distribution; density functional theory calculation; electron volt energy 1.8 MeV; oxygen-related defect; proton irradiation; proton-induced dehydrogenation; temperature-dependent low-frequency noise measurement; 1f noise; Aluminum gallium nitride; Degradation; Gallium nitride; HEMTs; Protons; Radiation effects; $1/f$ noise; AlGaN/GaN; HEMT; degradation; proton;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2281771

Filename

6651647