Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

Author

Yang, Shyh-Horng ; Morris, Steven J. ; Tian, Shiyang ; Parab, Krishnakumar B. ; Tasch, Al F., Jr.

Author_Institution

PRC/MER, Texas Univ., Austin, TX, USA

Volume

9

Issue

1

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

49

Lastpage

58

Abstract

In this paper is reported a new physically based Monte Carlo model and simulator for accurate simulation of arsenic ion implantation in (100) single-crystal silicon. A new damage generation model and an improved electronic stopping power model have been developed. These new physically based models greatly improve the capability for predicting arsenic as-implanted profiles. This new Monte Carlo model predicts very well the detailed profile dependence on the implant tilt and rotation angles as well as on the implant dose and energy over the energy range 15-180 keV

Keywords

Monte Carlo methods; arsenic; doping profiles; elemental semiconductors; energy loss of particles; ion implantation; semiconductor process modelling; silicon; (100) single-crystal Si; 15 to 180 keV; Monte Carlo simulation; Si:As; UT-MARLOWE; as-implanted profiles; damage generation model; electronic stopping power model; implant dose dependence; implant energy; implant rotation angle; implant tilt angle; ion implantation; physically based Monte Carlo model; Crystallization; Doping profiles; Implants; Ion implantation; Monte Carlo methods; Power generation; Predictive models; Rapid thermal processing; Semiconductor process modeling; Silicon;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.484282

Filename

484282