Methods for noise isolation in RFCMOS ICs

Author

Lee, Chih-Yuan ; Chen, Tung-Sheng ; Kao, Chin-Hsing

Author_Institution

Dept. of Electr. Eng., Nat. Defense Univ., Tahsi, Taiwan

Volume

24

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

478

Lastpage

480

Abstract

Different process techniques of suppressing the transmission of high-frequency noise induced by fast-switching MOS gates through silicon (Si) substrate have been examined. The isolated n/sup +/-pocket structure formed by a new process technique designed in this work has proven to be most effective in guarding vulnerable devices from remnant high-frequency noise roaming in the substrate among the structures we have used in the experiment: p/sup +/ guard ring, proton implant, and pocket structures. The noise suppressing efficiency is -75 dB at 1 GHz of n/sup +/-pocket structure in contrast to -38 dB at 1 GHz of unprotected devices. The protecting structures should become a decisive measure for future success of Si-based radio frequency integrated circuit (RFIC) applications.

Keywords

CMOS integrated circuits; integrated circuit noise; ion implantation; radiofrequency integrated circuits; 1 GHz; RFCMOS ICs; Si; fast-switching MOS gates; high-frequency noise; noise isolation; noise suppressing efficiency; p/sup +/ guard ring; pocket structures; process technique; proton implant; CMOS technology; Implants; Integrated circuit noise; Integrated circuit technology; Protection; Protons; Radiofrequency integrated circuits; Semiconductor device noise; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.815001

Filename

1217303