• DocumentCode
    757179
  • Title

    Front-End ASIC for High Resolution X-Ray Spectrometers

  • Author

    De Geronimo, Gianluigi ; Chen, Wei ; Fried, Jack ; Li, Zheng ; Pinelli, Donald A. ; Rehak, Pavel ; Vernon, Emerson ; Gaskin, Jessica A. ; Ramsey, Brian D. ; Anelli, Giovanni

  • Author_Institution
    Instrum. Div., Brookhaven Nat. Lab., Upton, NY
  • Volume
    55
  • Issue
    3
  • fYear
    2008
  • fDate
    6/1/2008 12:00:00 AM
  • Firstpage
    1604
  • Lastpage
    1609
  • Abstract
    We present an application specific integrated circuit (ASIC) for high-resolution X-ray spectrometers. The ASIC is designed to read out signals from a pixelated silicon drift detector (SDD). Each hexagonal pixel has an area of 15 mm2 and an anode capacitance of less than 100 fF. There is no integrated Field Effect transistor (FET) in the pixel, rather, the readout is done by wire-bonding the anodes to the inputs of the ASIC. The ASIC provides 14 channels of low-noise charge amplification, high-order shaping with baseline stabilization, and peak detection with analog memory. The readout is sparse and based on low voltage differential signaling. An interposer provides all the interconnections required to bias and operate the system. The channel dissipates 1.6 mW. The complete 14-pixel unit covers an area of 210 mm2, dissipates 12 mW cm-2, and can be tiled to cover an arbitrarily large detection area. We measured a preliminary resolution of 172 eV at -35 degC on the 6 keV peak of a 55Fe source.
  • Keywords
    X-ray spectrometers; application specific integrated circuits; capacitance; integrated circuit interconnections; position sensitive particle detectors; readout electronics; silicon radiation detectors; SDD; analog memory; anode capacitance; application specific integrated circuit; baseline stabilization; front-end ASIC; high resolution X-ray spectrometers; high-order shaping; interconnections; low-noise charge amplification; pixelated silicon drift detector; read out signals; voltage differential signaling; Analog memory; Anodes; Application specific integrated circuits; Capacitance; Detectors; FETs; Signal design; Signal resolution; Silicon; Spectroscopy; ASIC; SDD; X-ray spectrometer;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.922218
  • Filename
    4545104