• DocumentCode
    757565
  • Title

    Enhanced intersubband absorption in stepped double barrier quantum wells

  • Author

    Lai, K.T. ; Haywood, S.K. ; Gupta, R. ; Missous, M.

  • Author_Institution
    Dept. of Eng., Hull Univ., UK
  • Volume
    38
  • Issue
    11
  • fYear
    2002
  • fDate
    5/23/2002 12:00:00 AM
  • Firstpage
    529
  • Lastpage
    530
  • Abstract
    Intersubband absorption is measured in the conduction band of GaAs and stepped GaAs/InxGa1-xAs multiple-quantum-wells confined by narrow AlAs barriers. Enhanced absorption from n=1 to n=2 is observed in the stepped wells. This is attributed to relaxation of the intersubband polarisation selection rule
  • Keywords
    III-V semiconductors; conduction bands; gallium arsenide; indium compounds; infrared spectra; quantum wells; semiconductor quantum wells; FTIR absorption spectrum; GaAs; GaAs-InxGa1-xAs; GaAs-InGaAs; conduction band; enhanced intersubband absorption; intersubband polarisation selection rule; multiple-quantum-wells; narrow AlAs barriers; stepped double barrier quantum wells;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020261
  • Filename
    1006801
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=757565