• DocumentCode
    757580
  • Title

    Well-driven floating gate transistors

  • Author

    Mondragón-Torres, A.F. ; Schneider, M.C. ; Sanchez-Sinencio, Edgar

  • Author_Institution
    Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
  • Volume
    38
  • Issue
    11
  • fYear
    2002
  • fDate
    5/23/2002 12:00:00 AM
  • Firstpage
    530
  • Lastpage
    532
  • Abstract
    A new layout structure for floating gate MOS devices on top of an isolating n-well is proposed. The well provides the floating device with noise isolation from the substrate and can also be used as an additional input for threshold voltage control or signal modulation
  • Keywords
    MOSFET; MI-FGMOS transistor; MOSFET; floating gate MOS devices; isolating n-well; layout structure; noise isolation; signal modulation; threshold voltage control; well-driven floating gate transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020360
  • Filename
    1006802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=757580