A resonant-cavity, separate-absorption-and-multiplication, avalanche photodiode with low excess noise factor

Author

Anselm, K.A. ; Murtaza, S.S. ; Hu, C. ; Nie, H. ; Streetman, B.G. ; Campbell, J.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

17

Issue

3

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

91

Lastpage

93

Abstract

We report on the design, fabrication, and performance of a photodiode that combines the advantages of a resonant cavity with a separate-absorption-and-multiplication avalanche photodiode. The device is grown on GaAs using molecular beam epitaxy and is designed to detect light near 900 nm. This photodetector has exhibited the following characteristics: an external quantum efficiency of 70%, a spectral linewidth of less than 7 nm, an avalanche gain in excess of 30, and low dark current. In addition, a low excess noise factor corresponding to 0.2/spl les/k/spl les/0.3 has been achieved.

Keywords

avalanche photodiodes; photodetectors; semiconductor device noise; 70 percent; 900 nm; GaAs; avalanche gain; dark current; design; excess noise factor; external quantum efficiency; fabrication; molecular beam epitaxy; photodetector; resonant-cavity; separate-absorption-and-multiplication avalanche photodiode; spectral linewidth; Absorption; Avalanche photodiodes; Dark current; Fabrication; Gallium arsenide; Integrated circuit noise; Molecular beam epitaxial growth; Optical noise; Photodetectors; Resonance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485177

Filename

485177