DocumentCode
758205
Title
AlGaInAs/InP 1.5 μm MQW DFB laser diodes exceeding 20 GHz bandwidth
Author
Steinhagen, F. ; Hillmer, H. ; Lösch, R. ; Schlapp, W. ; Walter, H. ; Göbel, R. ; Kuphal, E. ; Hartnagel, H.L. ; Burkhard, H.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
Volume
31
Issue
4
fYear
1995
fDate
2/16/1995 12:00:00 AM
Firstpage
274
Lastpage
275
Abstract
Buried mushroom multiquantum well DFB laser diodes with compressively strained GaInAs quantum wells and asymmetric confinement layer design are fabricated with a combined MBE/MOCVD technology. Packaged devices exhibit high -3 dB IM bandwidths for very low bias levels and a record bandwidth for this material system of 21 GHz
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 1.5 micrometre; 20 GHz; AlGaInAs-InP; AlGaInAs/InP; IM bandwidths; MBE/MOCVD technology; MQW DFB laser diodes; asymmetric confinement layer design; bias levels; buried mushroom multiquantum well lasers; compressively strained GaInAs quantum wells; packaged devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950212
Filename
375801
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