Nitride-based green light-emitting diodes with high temperature GaN barrier layers

Author

Wu, L.W. ; Chang, S.J. ; Su, Y.K. ; Chuang, R.W. ; Wen, T.C. ; Kuo, C.H. ; Lai, W.C. ; Chang, C.S. ; Tsai, J.M. ; Sheu, J.K.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

50

Issue

8

fYear

2003

Firstpage

1766

Lastpage

1770

Abstract

High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and increase the output intensity of the nitride-based green LEDs by increasing the growth temperature of GaN barrier layers from 700°C to 950°C. The 20-mA output power and maximum output power of the nitride-based green LEDs with high temperature GaN barrier layers was found to be 2.2 and 8.9 mW, respectively, which were more than 65% larger than those observed from conventional InGaN-GaN green LEDs. Such an observation could be attributed to the improved crystal quality of GaN barrier layers. The reliability of these LEDs was also found to be reasonably good.

Keywords

III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor growth; wide band gap semiconductors; 2.2 mW; 8.9 mW; 950 degC; InGaN-GaN; MQW; crystal quality; forward voltage; green light-emitting diodes; growth temperature; metalorganic chemical vapor deposition; output intensity; temperature ramping; Chemical vapor deposition; Gallium nitride; Light emitting diodes; MOCVD; Nitrogen; Photonic band gap; Power generation; Quantum well devices; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.815150

Filename

1218669