High-density GaAs integrated circuit manufacturing

Author

Mikkelson, James M. ; Tomasetta, Louis R.

Author_Institution

Vitesse Semicond. Corp., Colorado Springs, CO, USA

Volume

16

Issue

3

fYear

2003

Firstpage

384

Lastpage

389

Abstract

The essential items in the development of a high-density high-yield volume manufacturing process for GaAs integrated circuits are presented. The critical issues and decisions for creating the high-density GaAs (HGaAs) enhancement and depletion mode Schottky gate MESFET process are reviewed. The authors describe the process steps, fabrication equipment, and materials used to fabricate self-aligned, refractory gate, enhancement/depletion (E/D) MESFET multilevel metal GaAs integrated circuits. Representative device and circuit results are included.

Keywords

III-V semiconductors; MESFET integrated circuits; VLSI; gallium arsenide; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; GaAs; GaAs integrated circuits; Schottky gate MESFET process; VLSI; depletion mode MESFET process; enhancement mode MESFET process; fabrication equipment; high-density GaAs IC manufacturing; high-yield manufacturing process; interconnect technology; multilevel metal GaAs ICs; self-aligned refractory gate; volume manufacturing process; Circuit topology; Gallium arsenide; Integrated circuit manufacture; Integrated circuit technology; Logic circuits; MESFETs; Manufacturing processes; Microwave FETs; Semiconductor device manufacture; Very large scale integration;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2003.815630

Filename

1219483