Thermally stimulated currents in holmium oxide thin-film capacitors

Author

Wiktorczyk, T.

Author_Institution

Inst. of Phys., Tech. Wroclaw Univ., Poland

Volume

27

Issue

4

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

807

Lastpage

812

Abstract

Results of experimental analysis of vacuum-evaporated aluminum/holmium oxide/aluminum thin-film thermoelectrets by means of thermally stimulated currents are presented. All measurements were carried out in the temperature range 297 to 500 K, with an automated microcomputer-controlled system. The TSD and TSP current characteristics are presented for Al/Ho₂O₃/Al thin-film sandwiches with the insulator film thickness ranging from 52 to 370 nm. The TSD and TSP current plots obtained for different measurement conditions exhibit only a single peak in the temperature range 380 to 406 K. Trapping levels with activation energy of 0.5 to 0.7 eV are responsible for observed results

Keywords

aluminium; computerised instrumentation; holmium compounds; thermally stimulated currents; thermoelectrets; thin film capacitors; vacuum deposited coatings; 0.5 to 0.7 eV; 297 to 500 K; 52 to 370 nm; Al-Ho₂O₃-Al; TSC; TSD; TSP current characteristics; activation energy; experimental analysis; insulator film thickness; microcomputer-controlled system; temperature range; thermally stimulated currents; thermally stimulated desorption; thin-film capacitors; thin-film thermoelectrets; Capacitors; Current measurement; Insulation; Optical films; Sputtering; Temperature distribution; Temperature measurement; Thermal conductivity; Transistors; Voltage;

fLanguage

English

Journal_Title

Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

0018-9367

Type

jour

DOI

10.1109/14.155802

Filename

155802