• DocumentCode
    760934
  • Title

    Micromotor fabrication

  • Author

    Mehregany, Mehran ; Senturia, Stephen D. ; Lang, Jeffrey H. ; Nagarkar, Pradnya

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
  • Volume
    39
  • Issue
    9
  • fYear
    1992
  • fDate
    9/1/1992 12:00:00 AM
  • Firstpage
    2060
  • Lastpage
    2069
  • Abstract
    Micromotor fabrication and related issues are discussed. The micromotors under study are of the variable-capacitance side-drive type with salient-pole and wobble (harmonic) designs. Polysilicon surface micromachining forms the basis of the micromotor fabrication process. In this process, LPCVD heavily phosphorus-doped polysilicon is used for the structural parts, LPCVD silicon nitride is used for electrical isolation, and CVD low-temperature oxide is used to as the sacrificial material. The fabrication process affects the performance characteristics of the micromotor through the reproduction accuracy of the design geometry and through the modification of the characteristics of contacting surfaces. Pattern definition and delineation are among the most critical steps of the micromotor fabrication process because of the increasing surface topography during fabrication and the large film thicknesses utilized. The release and testing process can affect the frictional characteristics of the micromotor significantly, determining success or failure of operation by dielectric excitation
  • Keywords
    micromechanical devices; semiconductor technology; small electric machines; CVD low-temperature oxide; LPCVD heavily P doped polysilicon; Si:P; Si3N4; SiO2; delineation; dielectric excitation; electrical isolation; fabrication process; harmonic designs; micromotor; pattern definition; performance characteristics; salient-pole; side-drive type; variable-capacitance; wobble designs; Capacitance; Conducting materials; Fabrication; Mechanical systems; Micromachining; Micromotors; Rotors; Silicon; Surface topography; Torque;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.155878
  • Filename
    155878