DocumentCode
761704
Title
High-frequency differential piezoelectric photoacoustic investigation of ion-implanted
Author
Zuccon, Johnny F. ; Mandelis, Andreas
Author_Institution
Opt. Recording Corp., Toronto, Ont., Canada
Volume
35
Issue
1
fYear
1988
Firstpage
5
Lastpage
13
Abstract
An exploratory application of position-modulation photoacoustic imaging of ion-implanted
Keywords
elemental semiconductors; ion implantation; laser beam applications; photoacoustic effect; silicon; ultrasonic materials testing; 0.2 MHz; 1.06 micron; Nd/sup 3+/:YAG laser; YAG:Nd; YAl5O12:Nd; differential piezoelectric photoacoustic investigation; ion-implanted; ion-implanted parameters; laser beam position modulation; semiconductor; semiconductor processing; ultrasonic materials testing; Acoustic signal detection; Condition monitoring; Implants; Laser beams; Microphones; Optical modulation; Probes; Semiconductor lasers; Semiconductor materials; Silicon;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.4142
Filename
4142
Link To Document