DocumentCode
762615
Title
High Q inductors for wireless applications in a complementary silicon bipolar process
Author
Ashby, Kirk B. ; Koullias, Ico A. ; Finley, William C. ; Bastek, John J. ; Moinian, Shahriar
Author_Institution
AT&T Bell Labs., Reading, PA, USA
Volume
31
Issue
1
fYear
1996
fDate
1/1/1996 12:00:00 AM
Firstpage
4
Lastpage
9
Abstract
Rectangular spiral inductors with Q´s over 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model for the inductors has been developed, and a test filter and mixer have been built to verify the performance of the inductors and the accuracy of the model
Keywords
Q-factor; bipolar analogue integrated circuits; elemental semiconductors; inductors; silicon; Si; broadband model; high Q inductors; high-speed complementary bipolar process; mixer; rectangular spiral inductors; test filter; wireless applications; Circuit testing; Filters; Frequency; Inductors; Integrated circuit measurements; Kirk field collapse effect; Metallization; Q measurement; Silicon; Spirals;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.485838
Filename
485838
Link To Document