Two-stage quasi-class-E power amplifier in GaN HEMT technology

Author

Gao, Steven ; Xu, Hongtao ; Heikman, Sten ; Mishra, Umesh K. ; York, Robert A.

Author_Institution

Sch. of Eng., Univ. of Northumbria, Newcastle upon Tyne

Volume

16

Issue

1

fYear

2006

Firstpage

28

Lastpage

30

Abstract

This letter presents a two-stage quasi-class-E monolithic microwave integrated circuit power amplifier at 2.0GHz, which is based on field-plated GaN high electron mobility transistor technology. It consists of a driver stage and a power stage. The circuit schematic is described. The amplifier achieves an output power of 37.5dBm into a 50-Omega load, a power added efficiency (PAE) of 50%, and a gain of 18.2dB. A power density of 5.6W/mm is achieved

Keywords

HEMT integrated circuits; MMIC power amplifiers; 18.2 dB; 2.0 GHz; 50 percent; Class E; GaN; driver stage; high electron mobility transistor; monolithic microwave integrated circuit; power added efficiency; power amplifier; power density; power stage; Gallium nitride; HEMTs; High power amplifiers; Integrated circuit technology; MMICs; MODFETs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Class E; GaN; high electron mobility transistor (HEMT); high power; monolithic microwave integrated circuit (MMIC); power amplifier;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.861353

Filename

1561308