High sensitivity InP-based monolithically integrated pin-HEMT receiver-OEIC´s for 10 Gb/s

Author

Kuebart, Wolfgang ; Reemtsma, Jan-Hinnerk ; Kaiser, Detlef ; Grosskopf, Holger ; Besca, Franziska ; Luz, Gerhard ; Körber, Wolfgang ; Gyuro, Imre

Author_Institution

Res. Centre, Alcatel SEL AG, Stuttgart, Germany

Volume

43

Issue

9

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

2334

Lastpage

2341

Abstract

InP-based pin-HEMT receiver-OEIC´s with different circuit layouts for bit rates up to 10 Gb/s are simulated, realized and characterized. The circuits under investigation are a high impedance amplifier, a common-gate circuit, and a transimpedance-cascode circuit. The high frequency behavior of all circuits is compared by means of on-wafer characterization. All circuits show a bandwidth of more than 5 GHz, the transimpedance circuit has the highest responsivity (12.9 dB A/W) and a very low average noise current of 11.5 pA/√(Hz) when assembled in a module. The receiver sensitivity of the transimpedance circuit in the module is measured to be as high as -19.2 dBm

Keywords

HEMT integrated circuits; III-V semiconductors; digital communication; indium compounds; integrated optoelectronics; modules; optical receivers; p-i-n photodiodes; wideband amplifiers; 10 Gbit/s; 5 GHz; InP; OEIC; PIN-HEMT receiver; circuit layouts; common-gate circuit; high frequency behavior; high impedance amplifier; monolithically integrated receiver; onwafer characterization; transimpedance-cascode circuit; Circuits; Epitaxial growth; HEMTs; Indium compounds; Indium phosphide; Optical amplifiers; Optical receivers; Photodetectors; Semiconductor device noise; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.414577

Filename

414577