DocumentCode
764870
Title
Highly Spin-Polarized Tunneling in Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co 
Cr 
Fe 
Al Thin Film and
Author
Marukame, T. ; Ishikawa, T. ; Sekine, W. ; Matsuda, K. ; Uemura, T. ; Yamamoto, M.
Author_Institution
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo
Volume
42
Issue
10
fYear
2006
Firstpage
2652
Lastpage
2654
Abstract
Highly spin-polarized tunneling with tunnel magnetoresistance (TMR) ratios of 90% at room temperature and 240% at 4.2 K was demonstrated for fully epitaxial magnetic tunnel junctions fabricated using a cobalt-based full-Heusler alloy Co2Cr0.6Fe 0.4Al (CCFA) thin film having a composition close to the stoichiometric one and a MgO tunnel barrier. A high tunneling spin polarization of 0.79 at 4.2 K was obtained for the epitaxial CCFA films from the TMR ratios. This adds to the promise of the fully epitaxial MTJ as a key device structure for utilizing the intrinsically high spin polarizations of Co-based full-Heusler alloy thin films
Keywords
aluminium alloys; chromium alloys; cobalt alloys; iron alloys; magnesium compounds; magnetic multilayers; spin polarised transport; tunnelling magnetoresistance; 4.2 K; Co2Cr0.6Fe0.4Al; MgO; full-Heusler alloy; fully epitaxial magnetic tunnel junctions; half-metallic ferromagnet; highly spin-polarized tunneling; thin film; tunnel barrier; tunnel magnetoresistance; Aluminum alloys; Chromium alloys; Cobalt alloys; Iron alloys; Magnetic films; Magnetic tunneling; Polarization; Temperature; Thin film devices; Tunneling magnetoresistance; Co-based full Heusler alloy; half-metallic ferromagnet; magnetic tunnel junction; tunnel magnetoresistance;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2006.878859
Filename
1704394
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