Epitaxial (Al,Ga)InP-oxide distributed Bragg reflectors for use in visible-wavelength optical devices

Author

MacDougal, Michael H. ; Hummel, Steven G. ; Dapkus, P.Daniel ; Zhao, Hanmin ; Cheng, Yong

Author_Institution

Center for Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA

Volume

7

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

385

Lastpage

387

Abstract

Epitaxially-grown distributed Bragg reflectors (DBR´s) employing thermally oxidized AlAs as the low refractive index constituent and (Al,Ga)InP as the high index constituent are fabricated. The 4.5-pair Ga/sub 0.5/In/sub 0.5/ P-oxide and Al/sub 0.5/In/sub 0.5/ P-oxide DBR´s exhibit high reflectivity (>90%) over a range of 635-967 nm and 470-676 nm, respectively. The (Al,Ga)InP-oxide DBR´s are shown to require less material to produce high reflectivity and to have significantly wider bandwidth than all-semiconductor DBR´s used in the visible spectrum.<>

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; electro-optical modulation; epitaxial growth; gallium compounds; indium compounds; optical fabrication; reflectivity; refractive index; semiconductor growth; semiconductor lasers; 470 to 676 nm; 635 to 967 nm; AlGaInP; DBR; DBR lasers; Fabry Perot modulators; distributed Bragg reflectors; epitaxial (Al,Ga)InP-oxide distributed Bragg reflectors; high index constituent; high reflectivity; low refractive index; thermally oxidized AlAs; visible spectrum; visible-wavelength optical devices; Bandwidth; Dielectric materials; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Optical devices; Oxidation; Reflectivity; Refractive index; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.376810

Filename

376810