A fast electron beam lithography simulator based on the Boltzmann transport equation

Author

Glezos, N. ; Raptis, I.

Author_Institution

Inst. of Microelectron., Athens, Greece

Volume

15

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

92

Lastpage

102

Abstract

A fast simulator for electron beam lithography exposure, based on the Boltzmann transport equation is proposed. Using LITHOS (LITHOgraphy Simulator) it is possible to calculate various important parameters which are useful in performing proximity corrections in e-beam lithography and to predict the resist profile after development. This method is proposed as an alternative to the more common Monte Carlo approach as being much faster since it is based on the calculation of analytical expressions. The results obtained by the analytical model are compared to existing experimental results and to those obtained by other methods. The case of a multilayer sample is considered as being of importance in electron beam patterning. All important phenomena (backscattering, secondary electrons) are included in the calculations

Keywords

Boltzmann equation; backscatter; digital simulation; electron beam lithography; electronic engineering computing; secondary electron emission; semiconductor process modelling; Boltzmann transport equation; LITHOS; analytical model; backscattering; electron beam lithography simulator; fast simulator; lithography exposure; multilayer sample; proximity corrections; resist profile prediction; secondary electrons; Backscatter; Boltzmann equation; Electron beams; Lithography; Monte Carlo methods; Nonhomogeneous media; Predictive models; Proximity effect; Resists; Substrates;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.486275

Filename

486275