DocumentCode
767583
Title
Heating in electron turnstiles and pumps
Author
Niu, Q. ; Liu, C. ; Edwards, H.L. ; de Lozanne, A.L. ; Kirk, W.P.
Author_Institution
Dept. of Phys., Texas Univ., Austin, TX, USA
Volume
44
Issue
2
fYear
1995
fDate
4/1/1995 12:00:00 AM
Firstpage
564
Lastpage
567
Abstract
Heating and therefore a loss of precision can arise easily at low temperatures in electron turnstiles and pumps based primarily on the Coulomb blockade effect. This heating is due to the fact that electrons can be deposited in excited states in the metal islands or quantum dots; the problem is exaggerated by the weakness of the relaxation processes in the islands or dots. The effects of heating can be reduced by enhancing electron-phonon coupling in the quantum dots or metal islands of such devices, or prevented by using smaller device structures where spacings between discrete levels of individual electrons are large
Keywords
electron-phonon interactions; excited states; heating; probability; quantum interference phenomena; semiconductor quantum dots; tunnelling; Coulomb blockade effect; Fermi energy; effects of heating; electron turnstiles; electron-phonon coupling; excited states; loss of precision; measurement; metal islands; pumps; quantum dots; relaxation processes; single electron trapping; Electron traps; Frequency; Heat pumps; Heating; Kirk field collapse effect; Lattices; Nanostructured materials; Phonons; Quantum dots; Temperature;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/19.377908
Filename
377908
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